Silicon carbide (SiC) ceramics have excellent characteristics such as strong oxidation resistance, good wear resistance, high hardness, good thermal stability, high temperature strength, small coefficient of thermal expansion, high thermal conductivity, thermal shock resistance and chemical corrosion resistance. Therefore, it has already played a great role in petroleum, chemical industry, machinery, aerospace, nuclear energy and other fields, na ol manmeri i save tingim moa yet long ol manmeri i gat . Olsem, ol i ken yusim SiC seramik olsem ol kain kain bearing, bal, nosel, sil, ol tul bilong katim, ol tul bilong katim ges, ol ges tabin blade, ol tabosaja rota, ol piksa i save soim ol skrin na ol roket kombusen rum linings.
Ol gutpela samting bilong SiC seramik i klostu wankain olsem ol narakain straksa bilong ol{{0} SiC em i wanpela kompaun i gat strongpela kovalent bon, na aionisiti bilong Si-C bon long SiC-C bon long SiC i gat samting olsem 12%{{3}” Olsem na, SiC i gat bikpela strong, bikpela elastik modulus na gutpela wear resistens i no inap kisim bagarap long HCl, HCl, HCle SiC bai ol i no inap kisim HCl, HCl, HCle SiC bai ol i no inap kisim HCl, HCle SiC bai ol i no inap kisim HCl, HCl, HCle SiC bai ol i no inap kisim HCl, HCle SiC bai ol i no inap kisim bagarap long HC. HF and alkali solutions such as NaOH. Oxidation is easy to occur when heating in air, but SiO2 formed on the surface will inhibit the further diffusion of oxygen during oxidation, so the oxidation rate is not high. In terms of electrical properties, SiC is semiconductor, and the introduction of a small amount of impurities will show good conductivity. In addition, SiC has excellent thermal konduktiviti.
SiC i gat na Tupela kristal fom. , kristal straksa bilong SiC em i kubik sistem, na Si na C fom i pes senta kubik latis; I gat moa long 100 politaip bilong SiC, olsem 4H, 15R na 6H, namel long ol 6H politaip em i wanpela i save kamap planti taim long indastriel aplikesen. I gat wanpela kain thermal stebiliti rilesen namel long ol kain kain SiC{7}} Taim tempereja i daunbilo long 1600 digri , SiC i}} Taim tempereja i daunbilo long 1600 digri , SiC i}} Taim temperaja i daunbilo long 1600 digri , SiC }} Taim tempereja i stap daunbilo long 1600 digri , SiC }} Taim tempereja i stap daunbilo long 1600 digri , SiC Ｌ}} . digri , , 4 SiC i save senis isi isi i go long , 4 Ol kain kain politaip bilong SiC. 4H SiC i isi long kamapim long samting olsem 2000 digri ; Tupela 15R na 6H politaip i isi long kamapim long bikpela tempereja antap long 2100 digri ; Long 6H SiC, em i stebol tru maski sapos tempereja i winim 2200 digri . Difrens namel long ol fri eneji bilong ol kain kain politaip long SiC em i liklik tru. Olsem na, strongpela solusen bilong ol liklik pipia bai kamapim ol senis tu long thermal stebiliti rilesensip namel long ol politaip{20}}
